GaN FAQs | GaN Systems
Chinese team develops Kilovolt GaN diode - News
Switching performance of quasi-vertical GaN-based p-i-n diodes on Si
Typical current-voltage characteristics of the Au/n-GaN diode at room... | Download Scientific Diagram
Increasing GaN Schottky diode breakdown voltage with recessed double-field plate anode
Improving Ni/GaN Schottky diode performance through interfacial passivation layer formed via ultraviolet/ozone treatment - ScienceDirect
OSA | Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection
Obliterating dynamic on-resistance degradation - News
Electrical properties and carrier transport mechanism in V/p-GaN Schottky diode at high temperature range - ScienceDirect
A Seriously High-Power Gallium Nitride Diode | Engineering.com
Graphene-GaN Schottky diodes | SpringerLink
Deep levels in n-type Schottky and p + -n homojunction GaN diodes | SpringerLink
GaN two-terminal devices, High-breakdown Schottky diodes - III-nitride semiconductors and their modern devices
Passivation effect of graphene on AlGaN/GaN Schottky diode - RSC Advances (RSC Publishing)
GaN-Based Schottky Diode | IntechOpen
Gallium nitride vertical junction barrier Schottky diodes
Electrical characterization of the Mg implanted GaN p-i-n diode. (a)... | Download Scientific Diagram
Passivation effect of graphene on AlGaN/GaN Schottky diode - RSC Advances (RSC Publishing)
Improved performance in vertical GaN Schottky diode assisted by AlGaN tunneling barrier: Applied Physics Letters: Vol 108, No 11
Study of a GaN Schottky diode based hydrogen sensor with a hydrogen peroxide oxidation approach and platinum catalytic metal - ScienceDirect
Different Isolation Processes for Free-Standing GaN p-n Power Diode with Ultra-High Current Injection
Panasonic claims 7.6kA/cm² for a GaN diode
Switching performance of quasi-vertical GaN-based p-i-n diodes on Si
IQE, imec make 650V GaN-on-Si diodes on 200mm wafers
Hydrogen sensors using nitride-based semiconductor diodes: the role of metal/semiconductor interfaces. - Abstract - Europe PMC
Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics. - Abstract - Europe PMC
